A1n masking for selective etching of sapphire

Details A1n masking for selective etching of sapphire A1n masking for selective etching of sapphire

C - Chemistry, Metallurgy

23

F

149/5

C23F 1/02 (2006.01) C04B 41/53 (2006.01) C04B 41/91 (2006.01) C09K 13/00 (2006.01) G01D 15/18 (2006.01)

Patent

CA 1065746

AlN MASKING FOR SELECTIVE ETCHING OF SAPPHIRE Abstract of the Disclosure A method is disclosed for forming holes and depressions in aluminum oxide, including its sapphire form and spinels by etching using AlN as a maskant. This method is featured by the epitaxial deposition of an AlN film on a sapphire body, for instance. The AlN film is etched in a predetermined pattern and heat treated. The etchants used may be either H2 or molten Al which will selectively attack the sapphire substrate in the regions exposed by the AlN mask.

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