Accelerated growth from the gaseous phase of gallium...

Details Accelerated growth from the gaseous phase of gallium... Accelerated growth from the gaseous phase of gallium...

C - Chemistry, Metallurgy

30

B

148/2.1

C30B 23/00 (2006.01) C30B 25/00 (2006.01) C30B 28/12 (2006.01) H01L 21/205 (2006.01)

Patent

CA 1086610

ABSTRACT: A method of growing gallium arsenide crystals obtained by reaction of a first gaseous phase containing hy- drogen and arsenic trichloride and a liquid gallium phase, in which the said reaction forms a second gaseous phase from which gallium arsenide is deposited in such circumstances that the molar fraction of arsenic trichloride is larger than 2.10-2 and is preferably between 2.10-2 and 10-1. - 11 -

270487

Affiliated with

Also associated with

Rating

Accelerated growth from the gaseous phase of gallium... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Accelerated growth from the gaseous phase of gallium..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Accelerated growth from the gaseous phase of gallium... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-173321