Infra-red detector elements and their manufacture

Details Infra-red detector elements and their manufacture Infra-red detector elements and their manufacture

H - Electricity

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H01L 31/08 (2006.01) H01L 21/465 (2006.01) H01L 21/467 (2006.01) H01L 27/144 (2006.01) H01L 31/0224 (2006.01) H01L 31/0296 (2006.01) H01L 31/09 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1150806

1 PHB 32631 ABSTRACT: An infra-red radiation detector element and its manufacture is disclosed. The detector element has a mesa of infra-red sensitive material, e.g. cadmium mercury telluride, with separate metal electrodes formed on side-walls of the mesa from a metal layer. This permits a significant proportion of the current flow occurring between the electrodes in operation of the element to pass across the bulk of the mesa between its side-walls and not adjacent its top surface where the carrier recombination velocity may be higher. The mesa is formed by ion-etching using a masking layer e.g. of photoresist, and this permits reproducible etching over a uniform depth and the obtaining of a topographically rough surface to which the subsequently-deposited metal layer can have good adhesion. The electrodes are formed from this layer by a lift-off technique using the same masking layer. The ion-etch definition of the mesa can also be used to etch unmasked parts of a passivating layer on the element surface without any significant undercutting.

332583

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