Power thyristor

Details Power thyristor Power thyristor

H - Electricity

01

L

356/31

H01L 29/74 (2006.01) H01L 29/744 (2006.01)

Patent

CA 1068411

ABSTRACT OF THE DISCLOSURE A semiconductor element comprises a first conductive type first semiconductor layer which has an exposed surface at a first surface side to contact with a first contact; a second conductive type second semiconductor layer which forms a first PN junction with the first semiconductor layer and has an exposed surface at the first surface side to contact with the first contact; the first conductive type third semiconductor layer which forms a second PN junction with the semiconductor layer and has an exposed surface at a second surface side; and a fourth semiconductor layer which forms a third PN junction J3 with the third semiconductor layer and has an exposed surface at the second surface side; wherein the exposed surface of the third semiconductor layer includes the exposed surface faced substantially to the exposed surface of the second semiconductor layer and is brought into ohmic contact with the third B contact and the exposed surface of the fourth semiconductor layer includes a first part which is faced to the first semiconductor layer and is brought into ohmic contact with the third A contact and a second part which is faced to the exposed surface of the second semiconductor layer and is brought into ohmic contact with the second contact; and the first contact, the second contact, the third A contact and the third B contact are lead out.

266553

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