H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/22
H01L 31/10 (2006.01) H01L 31/0216 (2006.01) H01L 31/07 (2006.01) H01L 31/108 (2006.01)
Patent
CA 1159133
ABSTRACT A platinum-cadmium sulfide Schottky barrier photovoltaic detector which is capable of sensing near ultraviolet and short wavelength visible radiation with extremely small response to wavelengths longer than about 5200 angstroms. The detector is fabricated with both the ohmic and barrier contacts located on the same side of the cadmium sulfide substrate to facilitate wire attach- ment by high-speed bonding techniques. A titanium-gold- titanium infrared shield structure is deposited directly on the substrate and is utilized to provide a connection between the ohmic contact and the substrate. An insula- ting layer of silicon dioxide covers the shield structure. A thin layer of platinum is deposited directly on the substrate in a small central optically active area sur- rounded by the insulated shield structure. A metal boundary layer overlies the periphery of the platinum layer and prevents the barrier contact metalization from affecting the properties of the Schottky barrier. Both the ohmic and barrier contacts may be formed of a titan- ium adhesion layer and a layer of gold. The gold por- tions of these contacts touch the shield structure and the boundary layer through separate windows etched in the silicon dioxide insulating layer.
370052
Harnagel Gary L.
Harrison Joseph M.
Laga Gerry T.
Twaddell Victor A.
General Dynamics Corporation
Smart & Biggar
LandOfFree
Schottky barrier photovoltaic detector and process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Schottky barrier photovoltaic detector and process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schottky barrier photovoltaic detector and process will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1076925