Semicondutor charge transfer devices

Details Semicondutor charge transfer devices Semicondutor charge transfer devices

G - Physics

11

C

345/1, 352/82.2

G11C 11/40 (2006.01) H01L 27/04 (2006.01) H01L 29/423 (2006.01) H01L 29/768 (2006.01)

Patent

CA 1133134

ABSTRACT A semiconductor charge transfer device, e.g. a CCD area imaging array, having a multi-level polysilicon gate structure (20 - 22, 24, 25, 26) the geometry of the bus-line portions (24, 25, 26) of which are such that each bus-line has relatively large area regions where it does not overlap another polysilicon layer. The making of interconnections 24b, 25b, 26b) between the poly- silicon bus-lines and an overlying metal conductor pattern 24a, 25a, 26a) without producing inter-level short circuits via pinholes in the polysilicon is thus facili- tated.

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