H - Electricity – 03 – F
Patent
H - Electricity
03
F
330/14
H03F 3/16 (2006.01) H03K 5/02 (2006.01) H03K 17/0416 (2006.01)
Patent
CA 1115790
ABSTRACT OF THE DISCLOSURE A MOS-type FET (field effect transistor) amplifier includes a pair of P-channel and N-channel output stage MOS-type FETs which are ON- OFF controlled by a pulse signal and an inductive load. Each reverse current caused by the inductive load is shunted by a diode connected between the drain and source of each of the MOS-type FETs. An additional pair of diodes are provided in the drain-source circuits of the MOS-type FETs so as to prevent each reverse current flowing through respective substrates of the MOS-type FETs.
324933
Suzuki Tadao
Yoshida Tadao
Gowling Lafleur Henderson Llp
Sony Corporation
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