Method of selectively depositing glass on semiconductor devices

Details Method of selectively depositing glass on semiconductor devices Method of selectively depositing glass on semiconductor devices

C - Chemistry, Metallurgy

30

B

117/73, 204/96.3

C30B 35/00 (2006.01) B05D 5/12 (2006.01) H01L 21/316 (2006.01) H01L 21/56 (2006.01) H01L 23/29 (2006.01) H01L 23/31 (2006.01)

Patent

CA 1038329

METHOD OF SELECTIVELY DEPOSITING GLASS ON SEMICONDUCTOR DEVICES Abstract A method which comprises depositing a charge of a selected polarity on the areas coated with insulating material of a semiconductor device having areas of "bare" semiconductor and areas coated with insulating material, immersing the charged device in a liquid composition comprising an insulating liquid and dispersed glass particles carrying a charge of selected polarity which is either the same as or opposite to the charge on the insulating material, such that glass particles deposit either on the semiconductor or on the insulating material, removing the glass-coated device from the liquid, drying and firing to fuse the glass particles on the device. - 1 -

221479

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