Aluminium diffusion method for semiconductors

Details Aluminium diffusion method for semiconductors Aluminium diffusion method for semiconductors

H - Electricity

01

L

356/136

H01L 21/225 (2006.01) H01L 21/761 (2006.01) H01L 21/78 (2006.01)

Patent

CA 1048161

ABSTRACT OF THE DISCLOSURE Diffusion of aluminium into a silicon semi- conductor wafer from an annular or grid pattern of depositied metallic aluminium to form a p-type annular zone at least 75 microns deep. The diffusion is performed in an oxidizing atmosphere to inhibit aluminium contamination of the wager portion bounded by the p-type annular zone and in which for instance a thyristor may subsequently be formed. The aluminium may be diffused through the whole thickness of the wager to form a peripheral zone of the thyristor body. Figure 3 is suitable for publication. -25-

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