Amorphous semiconductor member and method of making same

Details Amorphous semiconductor member and method of making same Amorphous semiconductor member and method of making same

H - Electricity

01

L

356/42

H01L 45/00 (2006.01) H01L 29/04 (2006.01)

Patent

CA 1102925

AMORPHOUS SEMICONDUCTOR MEMBER AND METHOD OF MAKING THE SAME Abstract of Disclosure An amorphous semiconductor member includes an amorphous semi- conductor material which is formed in a solid amorphous host matrix having structural configurations which have local rather than long-range order and electronic configurations which have an energy gap and a large electrical activation energy, and, added to the amorphous host matrix, a modifier material having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix for reducing substantially the activation energy thereof and, hence, increasing substantially the electrical conductivity of the semiconductor member substantially at room temperature and above. The amount of addition of the modifier material controls the range of electrical conductivity, and can be greater than dopant amounts usually used for doping semiconductors. The amorphous host matrix is normally of intrinsic-like conduction and the modifier material added thereto changes the same to extrinsic-like conduction. In one form of the invention, a primarily lone-pair amorphous semiconductor material having orbitals is utilized wherein the orbitals of the modifier material interact with the orbitals of the amorphous host matrix and form the electronic states in the energy gap. In another form, a primarily tetrahedral bonding amorphous semiconductor material is utilized wherein the orbitals of the modi- fier material, added primarily in a non-subtitutional manner, interact with the amorphous host matrix and form the electronic states in the energy gap. In a further form, an amorphous semiconductor material containing boron is utilized wherein the orbitals of the modifier material interact with the amorphous host matrix and form the electronic states in the energy gap. -1-

300841

Affiliated with

Also associated with

Rating

Amorphous semiconductor member and method of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Amorphous semiconductor member and method of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Amorphous semiconductor member and method of making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1131338