Thyristor

H - Electricity – 01 – L

Patent

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H01L 29/74 (2006.01) H01L 29/10 (2006.01) H01L 29/36 (2006.01)

Patent

CA 1159157

11 48,962 ABSTRACT OF THE DISCLOSURE The present invention is directed to a thyristor comprised of four adjacent regions comprising an anode emitter region, an anode base region, a cathode base region and a cathode emitter region. In addition, the thyristor of the present invention has a plurality of gate regions extending from the p-n junction or interface between the two base regions into the anode base region and a thin region disposed between the anode emitter region and the anode base region. This thin region has the same type conductivity as the anode base region but is doped to higher level than the anode base region. In addition, an auxiliary thyristor is provided between a gate electrode disposed on a surface of the cathode base region and an electrode formed on the same surface of the cathode base region as the gate electrode.

361936

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