Avalanche photodiode array

Details Avalanche photodiode array Avalanche photodiode array

H - Electricity

01

L

345/18, 345/24

H01L 27/14 (2006.01) H01L 27/146 (2006.01) H01L 29/06 (2006.01) H01L 31/107 (2006.01)

Patent

CA 1177148

-12- RCA 76,603 AVALANCHE PHOTODIODE ARRAY ABSTRACT OF THE DISCLOSURE The invention is an APD array having a plurality of p-n junctions. The p-n junctions comprise a plurality of separate regions which extend a distance into a semiconductor body from a surface thereof and have a conductivity type opposed to that of the body. A region of the same conductivity type as that of the body extends a further distance into the body and is composed of sub-regions which overlap one another in the direction parallel to the surface of the body. The elements so formed have a more uniform avalanche gain and, because of the overlap of the sub-regions of first conductivity type, the likelihood of electric breakdown at the surface is reduced and the electrical isolation between the elements is increased. Moreover, because of the proximity of the adjacent elements the likelihood of breakdown at the junction edges is reduced. PPT81/883162

387431

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