Method of controlling forward voltage across schottky diode

Details Method of controlling forward voltage across schottky diode Method of controlling forward voltage across schottky diode

H - Electricity

01

L

356/42

H01L 21/363 (2006.01) H01L 21/285 (2006.01)

Patent

CA 1243129

11 ABSTRACT: Method of controlling forward voltage across Schottky diode. During the deposition of a metallic layer (62) on an N-type semiconductive region (24) to form a Schottky diode in a structure placed in a highly evacuated chamber (44), at least one selected gas is introduced into the chamber to control the threshold forward voltage VF across the diode. The selected gas preferably is oxygen, nitrogen or argon. The metallic layer (62) preferably comprises at least one of the metals Al, Cu, Au, Ag, Ni, Pd, Pt, Cr, Mo, W, Ti and In. Fig.2.

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