Rare earth doped semiconductor laser

Details Rare earth doped semiconductor laser Rare earth doped semiconductor laser

H - Electricity

01

S

345/33

H01S 5/30 (2006.01) H01S 5/22 (2006.01) H01S 3/16 (2006.01)

Patent

CA 1288157

RARE EARTH DOPED SEMICONDUCTOR LASER Abstract A solid state laser is disclosed wherein a semiconductor active layer 103 is arranged in a Fabry-Perot cavity and the active layer is doped with a rare earthion having a dominant emission wavelength. The proportion of elements for the compound active layer is chosen such that the bandgap corresponds to a wavelength which is longer than the emission wavelength of the rare earth ion. In the specific embodiment disclosed, the quaternary semiconductor compound is gallium indium arsenide phosphide and the rare earth ion is erbium.

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