Epitaxy of high t_ superconductors on silicon

Details Epitaxy of high t_ superconductors on silicon Epitaxy of high t_ superconductors on silicon

H - Electricity

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356/112, 26/112.

H01L 39/12 (2006.01) C30B 23/02 (2006.01) C30B 25/02 (2006.01) H01L 39/14 (2006.01) H01L 39/24 (2006.01)

Patent

CA 1336567

An epitaxial structure comprising a silicon containing substrate and a high Tc copper-oxide-based superconducting layer, which may include an intermediate layer between the silicon substrate and the superconductor layer. Epitaxial de- position is accomplished by depositing a superconductor on a (001) surface of silicon in a manner in which the unit cell of the superconductor layer has two out of three of its crystallographic axes rotated 45 degrees with respect to the corre- sponding axes of the silicon unit cell, the remaining axis of the superconductor unit cell being normal to the Si (001) surface.

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