Semiconductor device comprising a field effect transistor

Details Semiconductor device comprising a field effect transistor Semiconductor device comprising a field effect transistor

H - Electricity

01

L

356/149

H01L 29/76 (2006.01) H01L 29/06 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1223088

ABSTRACT: A semiconductor device comprising a field effect transistor of the D-MOS type which is composed of sub- structures and in which further surface zones are provided in the intermediate space between the regularly arranged substructures in order to improve the field distribution in the semiconductor body, as a result of which the break- down voltage of the transistor is increased. The further surface zones can be provided without additional processing steps being required during the manufacture and need not be contacted at the main surface

456467

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