Photoluminescence method of testing double heterostructure...

Details Photoluminescence method of testing double heterostructure... Photoluminescence method of testing double heterostructure...

G - Physics

01

R

356/24, 345/32,

G01R 31/26 (2006.01) G01N 21/64 (2006.01) G01R 31/308 (2006.01)

Patent

CA 1198225

- 14 - PHOTOLUMINESCENCE METHOD OF TESTING DOUBLE HETEROSTRUCTURE WAFERS Abstract Under photoluminescence (PL) excitation, the lateral spreading of photo-excited carriers can suppress the photoluminescence signal from double heterostructure (DH) wafers containing a p-n junction. In any DH with a p-n junction in the active layer, PL is suppressed if the power of the excitation source does not exceed a threshold value. This effect can be advantageously used for a nondestructive optical determination of the top cladding layer sheet conductance as well as p-n junction misplacement, important parameters for injection lasers and LEDs.

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