Method of performing solution growth of group iii-v compound...

Details Method of performing solution growth of group iii-v compound... Method of performing solution growth of group iii-v compound...

C - Chemistry, Metallurgy

30

B

148/2.55

C30B 19/00 (2006.01) C30B 19/04 (2006.01) H01L 21/208 (2006.01)

Patent

CA 1212018

ABSTRACT OF THE DISCLOSURE In a solution growth method to perform an epitaxial growth by doping an amphoteric impurity into GaAs compound semiconductor crystal, vapor of a crystal-constituting Group V element is supplied to the solution, during the growth process, from above this solution under a controlled vapor pressure, while maintaining the growth temperature at a constant value by relying on, for example, a temperature diffeence technique, whereby the conductivity type in the grown crystal layer can be controlled easily as desired, and also a pn junction can be conventionally formed in the grown crystal.

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