Programmable read-only memory structure and method of...

Details Programmable read-only memory structure and method of... Programmable read-only memory structure and method of...

G - Physics

11

C

352/82

G11C 11/34 (2006.01) H01L 21/326 (2006.01) H01L 21/38 (2006.01) H01L 21/74 (2006.01) H01L 29/06 (2006.01)

Patent

CA 1211561

14 "Abstract" "Programmable read-only memory structure and method of fabricating such structure". A programmable read only memory structure is formed in oxide isolated regions of a crystalline semiconductor body. The memory elements in an isolated region include a semiconductive junction diode formed by implanting or diffusing a first surface region of opposite conductivity type in the body of first conductivity type. The programmable element of the diode array comprises a second region formed as a surface layer in the first surface region. The second region is formed by implanting ions of sufficient energy and density to convert the surface layer of the fist region form crystalline to amorphous form. The amorphous layer is an antifuse and is electrically and irreversibly switchable from high resistance state to low resistance state.

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