Logic structure utilizing polycrystalline silicon schottky...

Details Logic structure utilizing polycrystalline silicon schottky... Logic structure utilizing polycrystalline silicon schottky...

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H01L 27/06 (2006.01) H01L 21/02 (2006.01) H01L 29/04 (2006.01) H01L 29/872 (2006.01) H03K 19/084 (2006.01)

Patent

CA 1183964

LOGIC STRUCTURE UTILIZING POLYCRYSTALLINE SILICON SCHOTTKY DIODES Abstract of the Disclosure An integrated circuit structure and process for fabricating it are described which allow fabrication of a very compact high-speed logic gate. The structure utilizes a bipolar transistor formed in an epitaxial silicon pocket surrounded by silicon dioxide. A pair of Schottky diodes and a resistor are formed outside the epitaxial pocket on the silicon dioxide and connected to the pocket by doped poly- crystalline silicon.

402522

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