Semiconductor overvoltage suppressor with exactly adjustable...

Details Semiconductor overvoltage suppressor with exactly adjustable... Semiconductor overvoltage suppressor with exactly adjustable...

H - Electricity

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356/66

H01L 29/06 (2006.01) H01L 29/36 (2006.01) H01L 29/87 (2006.01)

Patent

CA 1218759

ABSTRACT OF THE DISCLOSURE The device comprises a structure having a substrate of p type, an epitaxial layer of n type, a first region of p type diffused in the epitaxial layer and a second region of n type diffused in the first region. A first metal layer, which is in contact with the substrate, and a second metal layer which is in contact with the first and second regions, form the terminals of the device. The epitaxial layer has at least one zone, along the boundary with the first region, which has a greater concentration than the remainder of the layer, as a result of which conduction through this reverse biased junction takes place in this zone. This enables a very accurate actuation voltage to be provided for the suppressor.

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