Semiconductor device and method of manufacturing the...

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H - Electricity

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H01L 21/24 (2006.01) H01L 21/205 (2006.01) H01L 21/28 (2006.01) H01L 21/3205 (2006.01) H01L 29/04 (2006.01) H01L 29/167 (2006.01)

Patent

CA 1217116

ABSTRACT: The invention relates to a semiconductor device having a semiconductor body which comprises a circuit ele- ment having doped polycrystalline silicon. The doping com- prises carbon in a concentration higher than 1 ppm. Polysilicon thus doped has properties which are not influenced by temperature treatments of the semiconductor body.

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