Self-terminating thermal oxidation of a1-containing group...

Details Self-terminating thermal oxidation of a1-containing group... Self-terminating thermal oxidation of a1-containing group...

H - Electricity

01

L

356/178, 352/82.

H01L 29/38 (2006.01) H01L 21/28 (2006.01) H01L 21/316 (2006.01)

Patent

CA 1121520

- 1 - Abstract: The invention provides a method of forming an oxide layer on a major surface of a non-aluminum containing Group III-V compound body used in integrated circuits. First an Al-containing Group III-V compound layer is formed on the major surface and then the Al-containing layer is thermally oxidized for a time period sufficient to convert said layer to an oxide layer, the oxidizing being essentially self-terminating at the surface. This method provides a highly controllable and reproducible process for growing oxide layers that exhibit extremely sharp and smooth interfaces and precisely controlled layer thicknesses.

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