H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/30
H01L 29/38 (2006.01) G02F 1/1368 (2006.01) H01L 21/31 (2006.01) H01L 21/84 (2006.01) H01L 27/12 (2006.01) H01L 29/786 (2006.01)
Patent
CA 1175158
ABSTRACT OF THE DISCLOSURE A planar thin film transistor is described wherein each element of the transistor structure is disposed in a planar relationship with respect to the next adjacent layer. The method of manufacture generally includes the steps of depositing one of the elemental members of a thin film transistor structure and filling in the valleys between the elemental structure with an insulating material to form a planar surface which, in turn, forms the surface upon which the next planar layer is formed.
375559
Poleshuk Michael
Wysocki Joseph J.
Gowling Lafleur Henderson Llp
Xerox Corporation
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