Method and apparatus for forming a polycrystalline monolayer

Details Method and apparatus for forming a polycrystalline monolayer Method and apparatus for forming a polycrystalline monolayer

H - Electricity

01

L

345/23, 148/3.6

H01L 31/18 (2006.01) H01L 31/0336 (2006.01) H01L 31/0368 (2006.01)

Patent

CA 1325161

TITLE: METHOD AND APPARATUS FOR FORMING A POLYCRYSTALLINE MONOLAYER ABSTRACT OF THE DISCLOSURE Improved techniques are provided for forming a very thin polycrystalline layer of a semiconductor material on a glass substrate. The film material may be formed from a slurry of a semiconductor powder and a liquid carrier, and the slurry economically applied at room temperature by spraying techniques. Once dried, the film is compressed by the appli- cation of a substantial mechanical force. The compressed film is regrown in a heated atmosphere, forming a poly- crystalline film comprised of large mean diameter crystals, with many crystals having a mean diameter in excess of the film thickness. A high quality cadmium sulfide polycrystalline film suitable for forming a photovoltaic cells may be inexpensively manufactured according to these techniques.

549146

Affiliated with

Also associated with

Rating

Method and apparatus for forming a polycrystalline monolayer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for forming a polycrystalline monolayer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for forming a polycrystalline monolayer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1196438