Thin film transistor

Details Thin film transistor Thin film transistor

H - Electricity

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L

356/149

H01L 29/78 (2006.01) H01L 23/525 (2006.01) H01L 27/06 (2006.01) H01L 29/04 (2006.01) H01L 29/167 (2006.01) H01L 29/68 (2006.01) H01L 29/786 (2006.01) H01L 29/861 (2006.01)

Patent

CA 1188008

ABSTRACT A thin film, field effect transistor device having a source region, a drain region, a gate insulator, a thin film deposited amorphous alloy including at least silicon and fluorine coupled to the source region, the drain region and the gate insulator and a gate electrode in contact with the gate insulator. Preferably, the amorphous alloy also contains hydrogen and is a-Sia:Fb:Hc, where a is between 80 and 98 atomic percent, b is between 1 and 10 atomic percent and c is between 1 and 10 atomic percent. The field effect transistor can have various geometries, such as a V-MOS-like con- struction and can be deposited on various sub- strates with an insulator substrate between the active regions of the thin film, field effect tran- sistor and a conducting substrate. The thin film, field effect transistor can have various desirable characteristics depending upon the particular geom- etry chosen and thickness of the alloy such as, for example, a DC saturation current up to or greater than 10-4 amp, an upper cut off frequency at least above 10 MHz, a high OFF resistance: ON resistance

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