C - Chemistry – Metallurgy – 22 – C
Patent
C - Chemistry, Metallurgy
22
C
57/16
C22C 26/00 (2006.01) C04B 35/52 (2006.01) C04B 41/50 (2006.01) C04B 41/85 (2006.01)
Patent
CA 1327276
SILICON INFILTRATED POROUS POLYCRYSTALLINE DIAMOND COMPACTS AND THEIR FABRICATION ABSTRACT OF THE DISCLOSURE Disclosed is a method for producing a polycrystalline diamond compact which comprises providing a thermally-stable compact comprising between about 70% and 95% by volume diamond, characterized by a network of interconnected, empty pores dispersed throughout, and containing between about 0.05% and 3% by volume of a catalyst/sintering aid material; and subjecting said thermally-stable compact and a silicon material to a partial vacuum at an elevated temperature for a time adequate for said silicon material to infiltrate into said compact pores. The silicon material has a melting point not above about 1410°C and preferably is a silicon alloy having a melting point range of between about 800° and 1400°C.
610586
Company General Electric
Craig Wilson And Company
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