Method for making submicron mask openings using sidewall and...

Details Method for making submicron mask openings using sidewall and... Method for making submicron mask openings using sidewall and...

H - Electricity

01

L

204/96.05

H01L 21/70 (2006.01) H01L 21/033 (2006.01)

Patent

CA 1227456

ABSTRACT A method is disclosed for making submicron openings in a substrate. A mesa is formed on the substrate by reactive ion etching techniques. A film is deposited over the entire structure and the mesa is selectively etched away to yield a submicron-sized opening in the film. Using the film as a mask, the substrate exposed thereby is reactively ion etched. An example is given for producing an emitter mask for a polycrystalline silicon base bipolar transistor.

509770

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