Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

H - Electricity

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356/79

H01L 27/04 (2006.01) H01L 21/74 (2006.01) H01L 21/761 (2006.01) H01L 27/06 (2006.01)

Patent

CA 1203639

ABSTRACT: A semiconductor device having an integrated circuit in an epitaxial layer (2) on a substrate (1), in which the epitaxial layer comprises islands (2A, B, C, D) of the conductivity type opposite to that of the substrate (1) which are surrounded laterally by a surrounding region (2E) of the same conductivity type as the substrate. Both the islands and the surrounding region are formed by diffusion from buried layers (3A, B, C, D, E) through the epitaxial layer (2). A bipolar transistor is provided in at least one island. The p-n junctions (4A, B, C, D) between the islands and the surrounding region are sub- stantially at right angles to the surface. The invention also provides a method of manufacturing the device and is of particular importance for realizing very compact and fast circuits with low dissipation consisting of a com- bination of CMOS and bipolar sub-circuits.

413778

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