Field effect transistor with elongated ohmic contacts

Details Field effect transistor with elongated ohmic contacts Field effect transistor with elongated ohmic contacts

H - Electricity

01

L

356/126

H01L 29/78 (2006.01) H01L 21/338 (2006.01) H01L 29/417 (2006.01) H01L 29/812 (2006.01)

Patent

CA 1232976

PHF. 84-504 11 ABSTRACT: A field effect transistor for high-frequency applications comprising on a monocrystalline semi- insulating substrate (1) a thin active n-doped layer (2) of a material having a high electron mobility, on whose surface are deposited two ohmic contacts forming the source and drain contact regions (17 and 18) of the transistor, between which a metallic contact constitutes a gate electrode (8) of the Schottky type. According to the invention, the transistor is characterized in that a dielectric layer (4) deposited on the active layer (2) between the source and gate electrodes (17 and 8, respectively) on the one hand and between the gate and drain electrodes (8 and 18, respectively) on the other hand, and in that the metallic layer (5) constituting the ohmic contacts is continuously prolonged on this dielec- tric layer (4) without causing a shortcircuit with the gate (8). A method of manufacturing such a transistor is also proposed.

472278

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