Semiconductor laser with reduced absorption at a mirror facet

Details Semiconductor laser with reduced absorption at a mirror facet Semiconductor laser with reduced absorption at a mirror facet

H - Electricity

01

S

345/32

H01S 5/223 (2006.01) H01S 5/16 (2006.01)

Patent

CA 1212172

-13- SEMICONDUCTOR LASER WITH REDUCED ABSORPTION AT A MIRROR FACET ABSTRACT OF THE DISCLOSURE A semiconductor laser having an active layer which has a non-zero thickness in a region adjacent to at least one of the mirror facets which is less than that of the remainder of the active layer in the longitudinal direction. In the region adjacent to the mirror facet the laser light propagates primarily in a non-absorbing guide layer adjacent to the active layer thus, reducing optical absorption and heat generation at the mirror facet.

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