Process for growing a multi-component crystal

Details Process for growing a multi-component crystal Process for growing a multi-component crystal

C - Chemistry, Metallurgy

30

B

148/1.3, 148/3.6

C30B 29/46 (2006.01) C30B 11/00 (2006.01) C30B 11/06 (2006.01) C30B 11/12 (2006.01)

Patent

CA 1301034

Abstract of the Disclosure A process for growing a multi-component type crystal from the melt of a starting material consisting of more than three elements of the multi-component crystal in a sealed reaction container. The sealed reaction container is divided into a reaction zone and a vapour pressure control zone which are communicated to each other through a through-opening or openings. The starting material for the multi-component crystal is charged in the reaction zone while a vapour pressure control material consisting of more than two components of the multi-component crystal is charged in the vapour pressure control zone. And then, the temperature in the reaction control zone is adjusted and maintained at a predetermined value to grow the crystal from the melt under a controlled vapour pressure. This process is applicable to produce a wide variety of compound semiconductors of II-VI, III-V or the like, or oxide crystals.

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