H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/22
H01L 31/04 (2006.01) C23C 16/505 (2006.01) C23C 16/54 (2006.01) H01L 31/20 (2006.01)
Patent
CA 1188398
ABSTRACT A method and a multiple chamber apparatus for the continuous production of tandem, amor- phous, photovoltaic cells on substrate material, whereby, at least six amorphous semiconductor layers are continuously and sequentially deposited on the substrate material under steady state con- ditions. The substrate material is driven from a supply core, through at least two triads of depo- sition chambers, to a take-up core. Each amor- phous layer of each p-i-n-type cell is produced in one chamber of the triad of deposition chambers. In the first chamber of each triad of chambers, a dopant gas mixture is introduced to deposit a first conductive semiconductor layer atop the sub- strate. In the second chamber of each triad of chambers, a gas mixture is introduced to deposit an intrinsic layer atop the first layer. And in the third chamber of each triad of chambers, a dopant gas mixture is introduced to deposit a sec- ond conductive layer, opposite in conductivity from the first conductive layer, atop the intrin- sic layer. The multiple chamber apparatus is con- structed to substantially prevent (1) the dopant gases in the first or third chamber of each triad from contaminating the intrinsic gases in the sec- ond chamber of each triad of deposition chambers; (2) and the dopant gases in the third chamber of a preceding triad of deposition chambers and the dopant gases in the first chamber of a succeeding triad of deposition chambers from cross-contamina- tion. In the preferred embodiment, the intrinsic material is an amorphous silicon alloy which is doped by boron to form a p-type alloy and doped by phosphorous to form an n-type alloy. The pre- ferred embodiment further contemplates the use of a glow discharge deposition process wherein vacuum pressure conditions, temperature levels, reaction gas mixtures, reaction gas flow rates, cathode power generation levels, substrate speed of trav- el, and substrate tension are precisely con- trolled.
423993
Izu Masatsugu
Ovshinsky Herbert C.
Energy Conversion Devices Inc.
Macrae & Co.
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