H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/126, 148/2.8
H01L 21/285 (2006.01) H01L 21/225 (2006.01) H01L 21/28 (2006.01) H01L 21/336 (2006.01) H01L 21/82 (2006.01) H01L 21/8238 (2006.01) H01L 27/092 (2006.01)
Patent
CA 1289269
Abstract A new method for fabricating a semiconductor device, e.g., a MOS or MES IC, as WELL as the resulting device, are disclosed. In accordance with the new method, a semiconductor device is formed, at least in part, by forming a material region which includes metal, e.g., elemental metal or a metal-containing compound, on a semiconductor substrate. One or more dopants are implanted into the material region, and the substrate is heated in order to diffuse the dopants out of the material region and into the substrate, thus forming a dopant-diffused substrate region, e.g., a source or drain. Significantly, the new method involves implant conditions which yield a material region-to-substrate specific contact resistance equal to or less than about 10-6.OMEGA.-cm2. In addition, the new method involves heating temperatures and heating times which yield a dopant-diffused substrate region having a depth, relative to the top of the material region, equal to or less than about 0.2 micrometers.
584850
Liu Ruichen
Lynch William Thomas
Williams David Slate
American Telephone And Telegraph Company
Kirby Eades Gale Baker
LandOfFree
Method for fabricating semiconductor devices which include... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating semiconductor devices which include..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor devices which include... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1220641