Method of making oxide films

Details Method of making oxide films Method of making oxide films

C - Chemistry, Metallurgy

23

C

117/81

C23C 14/08 (2006.01) H01L 21/316 (2006.01)

Patent

CA 1217095

- 12 - ABSTRACT METHOD OF MAKING OXIDE FILMS Oxide (HmOn) films are grown by evaporation from separate sources of element (R) and an oxide (MrOs) which serves as the oxygen source. The oxide (MrOs) should sublimate congruently; i.e., without decomposing into oxygen and its constituent element (M). On the growth surface this oxide (MrOs) can react with the element (R) to form another oxide (RmOn) that is thermodynamically more stable: mR + MrOs -> RmOn + MrOs-n Using this technique, films of Al2O3, MgO, SlO2, and MgAl2O4 have been grown using As2O3 or Sb2O3 as the oxygen source.

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