Method of forming a shallow and high conductivity boron...

Details Method of forming a shallow and high conductivity boron... Method of forming a shallow and high conductivity boron...

H - Electricity

01

L

148/2.8

H01L 21/265 (2006.01)

Patent

CA 1204370

A METHOD OF FORMING A SHALLOW AND HIGH CONDUCTIVITY BORON DOPED LAYER IN SILICON ABSTRACT OF THE DISCLOSURE Implanting, with low energy (e.g. 75 Kev and below), a dose of boron difluoride (BF2) into an area on a silicon substrate which is post-damaged or pre-damaged by a silicon implant so that annealing, or activation, can be accomplished at temperatures in the range of 550°C to 900°C.

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