H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/156
H01L 21/60 (2006.01) H01L 23/48 (2006.01) H01L 23/485 (2006.01)
Patent
CA 1271270
ABSTRACT: Method of manufacturing a semiconductor device, in which a metallization with a thick connection electrode is provided on a semiconductor body. A method of manufacturing a semiconductor device comprising a semiconductor body (1), of which a surface (13) is provided with a metallization (15,16,17,18) with a thick connection electrode (19). The metallization is formed in a first metal layer (49) and the connection electrode is formed in a second metal layer (51). Between these metal layers is provided a third metal layer (50), which serves as an etching stopper during the formation of the connection electrode. During a single deposition step, the three metal layers (49,50,51) are provided, after which first the connection electrode and then the metallization are formed by etching. By providing the three metal layers in a single deposition step, the number of processing steps for manufacturing the semiconductor device is limited and it is moreover achieved that the adhesion between connection electrode (19) and metallization (15,16,17,18) is an optimum.
526962
Fetherstonhaugh & Co.
N.v. Philips Gloeilampenfabrieken
Peters Johannes S.
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