Method of manufacturing field effect transistors

Details Method of manufacturing field effect transistors Method of manufacturing field effect transistors

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H01L 27/08 (2006.01) H01L 21/306 (2006.01) H01L 21/338 (2006.01) H01L 21/8252 (2006.01) H01L 29/04 (2006.01) H01L 29/812 (2006.01) H01L 27/088 (2006.01) H01L 27/095 (2006.01)

Patent

CA 1201538

-10- Abstract of the Disclosure Field effect transistors are manufactured using a substrate of compound semiconductor material by defin- ing two gate areas which have their longitudinal dimensions so oriented with respect to the crystal axes of the substrate that the substrate material is more readily etchable through one of the gate areas than through the other gate area. The semiconductor material is etched through both the gate areas simul- taneously with the same etchant, whereby gate recesses of different respective depths are formed in the sub- strate. Metal is deposited into the recesses.

457573

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