Solder contacted semiconductor chips

H - Electricity – 05 – K

Patent

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356/138

H05K 3/22 (2006.01) C30B 35/00 (2006.01) H01L 21/60 (2006.01) H01L 21/78 (2006.01)

Patent

CA 1061013

ABSTRACT A simple production process for small-area semiconductor wafers is described. To a large-area semiconductor wafer there is applied a soft solder plate to which is in turn applied a plate provided with a perforated grid pattern. The whole is heated under load, whereby the solder is caused to migrate into the holes of the perforated grid pattern. The semiconductor wafer is then exposed to a sandblast which removes the semicon- ductor material between the solder domes at a high speed, but removes the solder domes only slowly, until the semiconductor wafer has been divided up. The solder domes are then used to contact the small-area semiconductor elements.

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