Vlsi mosfet circuits using refractory metal and/or...

Details Vlsi mosfet circuits using refractory metal and/or... Vlsi mosfet circuits using refractory metal and/or...

H - Electricity

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356/128

H01L 23/00 (2006.01) H01L 21/285 (2006.01) H01L 21/336 (2006.01)

Patent

CA 1235824

VLSI MOSFET CIRCUITS USING REFRACTORY METAL AND/OR REFRACTORY METAL SILICIDE Abstract of the Disclosure In the fabrication of VLSI MOSFET circuits, the sheet resistance of polysilicon gates and interconnects and the sheet resistance of shallow source and drain junctions are reduced by using refractory metal or refractory metal silicide. To optimize the use of refractory metal or silicide at the junction and gate regions, the refractory metal or silicide at the gate is made thicker than that at the source and drain by first forming a gate having a refractory metal or silicide content and subsequently forming a thin layer of refractory metal or silicide over the source, drain, and gate regions. - i -

486052

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