Ion beam implanter scan control system

Details Ion beam implanter scan control system Ion beam implanter scan control system

H - Electricity

01

J

356/176, 356/192

H01J 37/302 (2006.01) H01J 37/317 (2006.01)

Patent

CA 1275742

Ion Beam ImPlanter Scan Control System Abstract An ion beam implantation system utilizing two pairs of mutually orthogonal scanning electrodes. Two sawtooth waveforms of approximately the same frequency are applied to the scanning electrodes to produce four sided scanning patterns. The dimensions of these scanning patterns are varied to sweep out a scan pattern that uniformly implants a circular wafer. By perturbing the scanning voltages the instantaneous beam speed is adjusted to compensate for small dose nonuniformities.

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