Field-effect device with a superconducting channel

H - Electricity – 01 – L

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356/112

H01L 39/22 (2006.01) H01L 39/14 (2006.01)

Patent

CA 1315015

SZ 9-87-012 ABSTRACT A Field-Effect Device with a Superconducting Channel. A field-effect structure, formed on a substrate (20) and comprising a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high-Tc metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 1021/cm3 and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between "zero" (undepleted, superconducting) and "very high" (depleted).

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