C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
117/103, 204/96.
C23C 14/08 (2006.01) H01L 39/24 (2006.01)
Patent
CA 1332326
- 33 - Abstract of the Disclosure This invention is directed to a method of preparing a superconducting metal oxide film on silicon and silicon dioxide substrates. More particularly, the method comprises depositing a superconducting metal oxide precursor on the substrate and then subjecting it to annealing in an oxygen atmosphere according to a schedule which is critically defined as to time and temperature.
595623
Aslam Mohammad
Logothetis Eleftherios M.
Soltis Richard E.
Ford Motor Company Of Canada Limited
Sim & Mcburney
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