Hot electron or hot hole transistor

Details Hot electron or hot hole transistor Hot electron or hot hole transistor

H - Electricity

01

L

356/124

H01L 29/76 (2006.01) H01L 29/47 (2006.01)

Patent

CA 1157961

PHB 32670 C 17 ABSTRACT A hot-electron or hot-hole transistor includes a base region through which current flow is by hot majority charge carriers. The emitter-base barrier-forming means comprises a barrier region having a sufficiently large thickness and impurity concentration of the opposite conductivity type that said barrier region is at least over part of its thickness undepleted by the depletion layer or layers present at the emitter-base barrier at zero bias. The application of a bias voltage (VBE) between the base and emitter of the transistor is neces- sary to establish a supply of said hot majority carriers having energies above the base-collector barrier, and this improves the collection efficiency of the transistor. In one form the emitter-base barrier-forming means also comprises a Schottky contact. In another form the emitter comprises an ohmic contact. The supply of said hot majority carriers may be established by avalanche or zener breakdown of said barrier region or by punch-through of the depletion layer(s). A low emitter capacitance can be obtained by including between the emitter contact and said barrier region a lower-doped zone of either conductivity type so as to spread further the depletion layer(s) at the emitter-base barrier. The base-collector barrier can be formed by a fully depleted barrier region. The transistor structor can be formed using ion-implatation or/and molecular beam epitaxy.

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