Semiconductor laser with non-absorbing mirror facet

Details Semiconductor laser with non-absorbing mirror facet Semiconductor laser with non-absorbing mirror facet

H - Electricity

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S

345/32

H01S 5/223 (2006.01) H01S 5/16 (2006.01)

Patent

CA 1206572

-14- SEMICONDUCTOR LASER WITH NON-ABSORBING FACETS ABSTRACT OF THE DISCLOSURE A constricted heterostructure laser in which the active layer does not extend to an emitting facet. The light from the active layer is coupled into an underlying guide layer which provides lateral guidance of the laser beam to the emitting facet. The shape of the output laser beam in both the lateral and transverse directions may be varied by varying the shape of the guide layer in that portion of the laser where the active layer does not overlie the guide layer.

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