Process for producing ternary or quaternary semiconductor...

Details Process for producing ternary or quaternary semiconductor... Process for producing ternary or quaternary semiconductor...

C - Chemistry, Metallurgy

30

B

23/127, 148/3.6

C30B 9/06 (2006.01) C30B 13/00 (2006.01) C30B 13/02 (2006.01)

Patent

CA 1217117

13 ABSTRACT OF THE DISCLOSURE Process for producing ternary or quaternary semiconductor compounds, particu- larly of formula Cd Hg Te or Cd Hg Te Se. It comprises the following stages: - forming a homogeneous mixture having a precise composition and corresponding to the compound to be obtained, of Cd Te and Hg Te powders in the case of the ternary compound Cd Hg Te and Cd Te Se and Hg Te or Cd Te and Hg Te Se powders in the case of the quaternary compound Cd Hg Te Se; - the mixture is compacted by applying a pressure; - the thus compacted mixture undergoes thermal interdiffusion treatment; - the recrystallization of the compound in monocrystalline form takes place by a single passage through the solvent zone.

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