Semiconductor memory comprising a dynamic discharge circuit

G - Physics – 11 – C

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G11C 11/34 (2006.01) G11C 11/415 (2006.01)

Patent

CA 1188806

ABSTRACT: "Semiconductor memory comprising a dynamic discharge cir- cuit". A semiconductor memory comprising a dynamic dis- charge circuit for the quick discharging of a power supply line whereto a memory matrix row (10) is connected when this power supply line (11) changes over from the electri- cal selected state to the electrical rest state. A transistor (T2) which is rendered conductive by a dynamic potential difference which arises, due to the slow discharge of the power supply line (11), between this line (11) and the selection circuit (T1) thereof, supplies a current for a brief period of time in order to achieve said quick discharging. The invention is used notably for the discharging of power supply lines of E.C.L.-type random access memories.

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