Silicon-based sensors and method of making same

Details Silicon-based sensors and method of making same Silicon-based sensors and method of making same

G - Physics

01

F

356/197, 73/69

G01F 1/68 (2006.01) G01F 1/684 (2006.01)

Patent

CA 1320358

ABSTRACT A silicon-based sensor (10) includes a substrate (20), a sensor element (12), and a protective diaphragm (22a) mounting and covering the sensor element (12). The diaphragm (22a) is a silicon layer (22) which, in a preferred embodiment, includes an etch-stop dopant. The etch-stop layer (22) is sealed to the substrate (20) so that the layer (22) covers and mounts the sensor element (12) to the substrate (20). The sensor (10) is fabricated by forming a trough area (33) in a surface (32) of a silicon block (30) (e.g., a silicon chip or wafer), treating the trough area (33) with an etch-stop dopant (e.g., boron), depositing a sensor element (12) onto the doped trough area (33), sealing at least the periphery of the doped trough area (33) to a surface of a substrate (20) (e.g., glass) so as to encapsulate the sensor element (12), and then etching away undoped regions of the silicon block (30) so that the doped trough area (33) remains as a protective diaphragm (22a) sealed to the substrate (20) and covering the sensor element (12). It is also possible to form a bonding pad (16) on untreated (e.g., undoped) discontinuous regions (22c) of an otherwise etch-stop treated trough layer (34) so that when etched, the bonding pad (16) is exposed to permit interconnection with electronic circuitry, yet the etch-stop treated layer (22) remains so as to mount the bonding pad (16) to the substrate.

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