Semiconductor oxide gas combustibles sensor

Details Semiconductor oxide gas combustibles sensor Semiconductor oxide gas combustibles sensor

G - Physics

01

N

356/179, 324/23

G01N 27/16 (2006.01) G01N 27/12 (2006.01)

Patent

CA 1221735

ABSTRACT OF THE DISCLOSURE The invention is an n-type semiconductor gas detecting element and a method for forming the same. The semiconductor oxide is bismuth molybdate having the compo- sition Bi2O3?3MOO3 and the gas detecting element formed therewith has high sensitivity to combustible gas. The detection of the combustible gases is based upon the change of electrical conductivity of a thick film of the semiconductor oxide detecting element resulting from the combustible gas component in an oxygen-containing atmo- sphere.

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