Current confinement in semiconductor light emitting devices

Details Current confinement in semiconductor light emitting devices Current confinement in semiconductor light emitting devices

H - Electricity

01

S

345/32

H01S 5/22 (2006.01) H01S 5/20 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1173548

- 23 - CURRENT CONFINEMENT IN SEMICONDUCTOR LIGHT EMITTING DEVICES Abstract of the Disclosure Semiconductor light emitting devices, lasers and LEDs, are described in which the current flow channel is narrower near the top surface of the device and wider at its bottom near the active region. Also, described are several attenuation masks for fabricating the channels of these devices by particle bombardment.

398635

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